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| BSS63 BSS63 C E SOT-23 Mark: T3 B PNP General Purpose Amplifier This device is designed for general purpose amplifier and switch applications requiring high voltages. Sourced from Process 74. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Value 100 110 6.0 200 -55 to +150 Units V V V mA C 3 Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics Symbol PD RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient Max *BSS63 350 2.8 357 Units mW mW/C C/W *Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm. 1997 Fairchild Semiconductor Corporation BSS63 PNP General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current IC = 100 A, IB = 0 IC = 10 A, IE = 0 IE = 1.0 A, IC = 0 VCB = 90 V, IE = 0 VCB = 90 V, IE = 0, TA = 150C VEB = 6.0 V, IC = 0 100 110 6.0 100 50 200 V V V nA A nA ON CHARACTERISTICS hFE VCE(sat) VBE(sat) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage IC = 10 mA, VCE = 1.0 V IC = 25 mA, VCE = 1.0 V IC = 25 mA, IB =2.5 mA IC = 25 mA, IB =2.5 mA 30 30 0.25 0.9 V V SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product IC = 25 mA, VCE = 5.0, f = 35 MHz 50 MHz NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors. Spice Model PNP (Is=21.48f Xti=3 Eg=1.11 Vaf=100 Bf=132.1 Ne=1.375 Ise=21.48f Ikf=.1848 Xtb=1.5 Br=3.661 Nc=2 Isc=0 Ikr=0 Rc=1.6 Cjc=17.63p Mjc=.5312 Vjc=.75 Fc=.5 Cje=73.39p Mje=.3777 Vje=.75 Tr=1.476n Tf=641.9p Itf=0 Vtf=0 Xtf=0 Rb=10) Typical Characteristics Typical Pulsed Current Gain vs Collector Current 200 V CE = 5V 150 125 C VCESAT- COLLE CTOR-EMITTER VOLTAGE (V) h FE - TYP ICAL PULSED CURRE NT GAIN Collector-Emitter Saturation Voltage vs Collector Current 0.4 = 10 0.3 100 25 C 0.2 25 C 125 C 50 - 40 C 0.1 - 40 C 0 0.0001 0.001 0.01 0.1 I C - COLLECTOR CURRENT (A) 1 0 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 BSS63 PNP General Purpose Amplifier (continued) Typical Characteristics Base-Emitter Saturation Voltage vs Collector Current 1 - 40 C 25 C V BE(O N)- BASE-E MITTER ON VOLTAGE (V) V BESAT - BASE -EMITTER VOLTAG E (V) Base-Emitter ON Voltage vs Collector Current 1 0.8 0.8 - 40 C 25 C 0.6 125 C 0.6 125 C 0.4 = 10 0.4 V C E = 5V 0.2 0.1 IC 1 10 - COLLECTOR CURRENT ( mA) 100 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 Collector-Cutoff Current vs Ambient Temperature I CBO - COLLECTOR CURRENT (nA) V CB = 10 0V BV CER - BREAKDOWN VOLTAGE (V) 100 Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base 220 210 10 1 200 3 190 0.1 180 25 50 75 100 125 T A - AM BIENT TE MPE RATURE (C) 150 170 0.1 1 10 100 1000 RESISTANCE (k ) Input and Output Capacitance vs Reverse Voltage 80 Power Dissipation vs Ambient Temperature 350 P D - POWER DISSIPATION (mW) 300 250 200 150 100 50 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150 f = 1.0 MHz CAPACITANCE (pF) 60 SOT-23 40 C eb 20 C cb 0 0.1 1 10 100 V R - REVERSE BIAS VOLTAGE(V) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST DISCLAIMER FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G |
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